bga 427 semiconductor group au -11-1998 1 in sieget a 25-technologie si-mmic-amplifie r vps05605 4 2 1 3 preliminary data cascadable 50 w -gain block unconditionally stable gain | s 21 | 2 = 18,5 db at 1.8 ghz (appl.1) gain | s 21 | 2 = 22 db at 1.8 ghz (appl.2) i p 3out = +7 dbm at 1.8 ghz ( v d =3v, i d =9.4ma) noise figure nf = 2.2 db at 1.8 ghz typical device voltage v d = 2 v to 5 v reverse isolation < 35 db (appl.2) eha07378 v 2 1 in out + 4 3 gnd circuit diagram esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking ordering code package pin configuration q62702-g0067 1, in bga 427 2, gnd 3, +v 4, out sot-343 bms maximum ratings symbol value parameter unit device current i d ma 25 device voltage 6 v v d ,+v p tot 150 mw total power dissipation, t s tbd c dbm r f input power p rfin -10 junction temperature t j 150 c ambient temperature -65 ...+150 t a storage temperature t stg -65 ...+150 thermal resistance tbd k/w junction - soldering point 1) r thjs 1) t s is measured on the emitter (gnd) lead at the soldering point to the pcb semiconductor group 1 1998-11-01
bga 427 semiconductor group au -11-1998 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol unit values typ. max. min. ac characteristics v d = 3 v, z o = 50w, testfixture appl..1 | s 21 | 2 - - - insertion power gain f = 0.1 ghz f = 1 ghz f = 1.8 ghz 27 22 28.5 - - - db reverse isolation f = 1.8 ghz s12 - 22 - noise figure f = 0.1 ghz f = 1 ghz f = 1.8 ghz - - - - - - 1.9 2 2.2 nf intercept point at the output f = 1.8 ghz ip 3out - + 7 - dbm return loss input f = 1.8 ghz rl in - >12 - db return loss output f = 1.8 ghz rl out - >9 - typical configuration appl.2 appl.1 eha07379 100 pf 100 pf 1 nf rf out rf in gnd + v bga 427 eha07380 2.2 pf 100 pf rf in 100 pf gnd rf out 100 nh 10 nf 100 pf + v bga 427 note: 1) large-value capacitors should be connected from pin 3 to ground right at the device to provide a low impedance path! (appl.1) 2) the use of plated through holes right at pin 2 is essential for pc-board-applications. thin boards are recommended to minimize the parasitic inductance to ground! semiconductor group 2 1998-11-01
bga 427 semiconductor group au -11-1998 3 s-parameters at t a = 25 c, (testfixture, appl.1) f s 11 s 21 s 12 s 22 ghz mag ang mag ang mag ang mag ang - 0.0022 0.0046 0.0104 0.0169 0.0194 0.0225 0.0385 0.0479 0.0517 0.0549 0.0709 0.0892 50.7 71.8 83.8 94.8 97.3 98.3 99.7 99.3 98.9 98.8 97.1 96.9 0.1 0.2 0.5 0.8 0.9 1 1.5 1.8 1.9 2 2.5 3 -38.3 -16 -20.8 -56.9 -69.1 -80.6 -133.5 -156.1 -162.8 -167.7 172.8 153.3 164.9 158.9 135.2 115.4 109.4 104 84.9 77 74.7 72.3 63 55 24.821 24.606 22.236 18.258 17.152 15.786 10.923 9.029 8.486 8.015 6.259 5.103 0.1382 0.1179 0.1697 0.1824 0.1782 0.176 0.1827 0.1969 0.2021 0.2116 0.2437 0.258 0.6435 0.6278 0.54 0.4453 0.4326 0.4129 0.3852 0.3917 0.3946 0.3991 0.4202 0.4477 174.8 166.9 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131 spice-model bga 427 eha07381 3 r r 1 p1 c p2 c 1 c r 2 p3 cc p4 p5 cr 4 11 14 13 t2 12 c'-e'- including parasitics diode out bga 427-chip in gnd + v t1 t1 t501 t2 t501 r 1 14.5k w r 2 280 w r 3 2.4k w r 4 170 w c 1 2.3pf c p1 0.2pf 0.2pf c p2 c p3 0.6pf c p4 0.1pf c p5 0.1pf c'-e'-diode t1 semiconductor group 3 1998-11-01
bga 427 semiconductor group au -11-1998 4 transistor chip data t1 (berkley-spice 2g.6 syntax) : is = 0.21024 aa v 39.251 vaf = ne = 1.7763 - v var = 34.368 nc = 1.3152 - w rbm = 1.3491 cje = 3.7265 ff ps 4.5899 tf = itf = 1.3364 ma v 0.99532 vjc = tr = 1.4935 ns - mjs = 0 xti = 3 - nf = 1.0405 - ise = fa 15.761 0.96647 - nr = isc = 0.037223 fa 0.21215 ma irb = rc = w 0.12691 0.37747 - mje = vtf = v 0.19762 96.941 ff cjc = xcjc = 0.08161 - 0.75 v vjs = eg = 1.11 ev 300 k tnom bf = 83.23 - a 0.16493 ikf = br = 10.526 - a ikr = 0.25052 rb = 15 w re = 1.9289 vje = 0.70367 v - xtf = 0.3641 ptf = 0 deg - 0.48652 mjc = cjs = 0ff - xtb = 0 fc = 0.99469 - c'-e'-diode data (berkley-spice 2g.6 syntax) : rs = 20 w is = 2 fa - 1.02 n = all parameters are ready to use, no scalling is necessary package equivalent circuit: l bi = 0.36 nh nh 0.4 l bo = l ei = 0.3 nh nh 0.15 l eo = l ci = nh 0.36 nh 0.4 l co = c be = 95 ff c cb = ff 6 c ce = 132 ff ff 28 c 1 = c 2 =88 ff c 3 = 8 ff l 1 = 0.6 nh l 2 = 0.4 nh eha07382 l bi 1 c be c bo l ei l l eo cb c ci l c 3 co l ce c chip 11 13 12 c'-e'- in diode c 2 2 l out l 1 14 + v gnd bga 427 valid up to 3ghz extracted on behalf of siemens small signal semiconductors b y institut fr mobil-und satellitentechnik (imst) 1996 siemens ag for examples and ready to use parameters please contact your local siemens distributor or sales office to obtain a siemens cd-rom or see internet: http://www.siemens.de/semiconductor/products/35/35.htm semiconductor group 4 1998-11-01
bga 427 semiconductor group au -11-1998 5 insertion power gain | s 21 | 2 = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz f 0 5 10 15 20 25 db 35 | s 21 | 2 vd=5v, id=17.5ma vd=4v, id=13.3ma vd=3v, id=9.5ma vd=2v, id=5.2ma noise figure nf = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz f 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 db 5.0 nf vd=5v, id=17.5ma vd=3v, id=9.5ma intercept point at the output ip 3out = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz f 0 5 10 15 dbm 25 ip 3out vd=5v, id=17.5ma vd=4v, id=13.3ma vd=3v, id=9.5ma vd=2v, id=5.2ma semiconductor group 5 1998-11-01
|
